Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3

摘要

We present a magnetoresistive-photoresistive device based on the interactionof a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate thatundergoes light-induced strain. The magnitude of the resistance andmagnetoresistance in the CoFe film can be controlled by the wavelength of theincident light on the BiFeO3. Moreover, a light-induced decrease in anisotropicmagnetoresistance is detected due to an additional magnetoelastic contributionto magnetic anisotropy of the CoFe film. This effect may find applications inphoto-sensing systems, wavelength detectors and can possibly open a researchdevelopment in light-controlled magnetic switching properties for nextgeneration magnetoresistive memory devices.